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    6H-SiC Crystallinity Behaviour upon B Implantation Studied by Raman Scattering

    New search for: Paskova, T.
    New search for: Valcheva, E.
    New search for: Ivanov, I. G.
    New search for: Yakimova, R.
    New search for: Savage, S.
    New search for: Nordell, N.
    New search for: Harris, C. I.

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    6H-SiC Crystallinity Behaviour upon B Implantation Studied by Raman Scattering

    New search for: Paskova, T.
    New search for: Valcheva, E.
    New search for: Ivanov, I. G.
    New search for: Yakimova, R.
    New search for: Savage, S.
    New search for: Nordell, N.
    New search for: Harris, C. I.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    6H-SiC Crystallinity Behaviour upon B Implantation Studied by Raman Scattering

    New search for: Paskova, T.
    New search for: Valcheva, E.
    New search for: Ivanov, I. G.
    New search for: Yakimova, R.
    New search for: Savage, S.
    New search for: Nordell, N.
    New search for: Harris, C. I.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    6H-SiC Crystallinity Behaviour upon B Implantation Studied by Raman Scattering

    Contributors:

    Paskova, T. (author) / Valcheva, E. (author) / Ivanov, I. G. (author) / Yakimova, R. (author) / Savage, S. (author) / Nordell, N. (author) / Harris, C. I. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 264/268 ; 741-744

    Publication date:

    1998-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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