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Raman scattering analysis of defects in 6H-SiC induced by ion implantation
Raman scattering analysis of defects in 6H-SiC induced by ion implantation
Raman scattering analysis of defects in 6H-SiC induced by ion implantation
Perez-Rodriguez, A. (Autor:in) / Gonzalez-Varona, O. (Autor:in) / Calvo-Barrio, L. (Autor:in) / Morante, J. R. (Autor:in) / Wirth, H. (Autor:in) / Panknin, D. (Autor:in) / Skorupa, W. (Autor:in)
MATERIALS SCIENCE FORUM ; 258/263 ; 727-732
01.01.1997
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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