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4H-SiC Wafers Studied by X-Ray Absorption and Raman Scattering
4H-SiC Wafers Studied by X-Ray Absorption and Raman Scattering
4H-SiC Wafers Studied by X-Ray Absorption and Raman Scattering
Xu, Q. (Autor:in) / Sun, H.Y. (Autor:in) / Chen, C. (Autor:in) / Jang, L.Y. (Autor:in) / Rusli, E. (Autor:in) / Mendis, S.P. (Autor:in) / Tin, C.C. (Autor:in) / Qiu, Z.R. (Autor:in) / Wu, Z.Y. (Autor:in) / Liu, C.W. (Autor:in)
MATERIALS SCIENCE FORUM ; 717/720 ; 509-512
01.01.2012
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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