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Interface States and Field-Effect Mobility in 6H-SiC MOS Transistors
Interface States and Field-Effect Mobility in 6H-SiC MOS Transistors
Interface States and Field-Effect Mobility in 6H-SiC MOS Transistors
Arnold, E. (Autor:in) / Ramungul, N. (Autor:in) / Chow, T. P. (Autor:in) / Ghezzo, M. (Autor:in)
MATERIALS SCIENCE FORUM ; 264/268 ; 1013-1016
01.01.1998
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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