A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Interface States and Field-Effect Mobility in 6H-SiC MOS Transistors
Interface States and Field-Effect Mobility in 6H-SiC MOS Transistors
Interface States and Field-Effect Mobility in 6H-SiC MOS Transistors
Arnold, E. (author) / Ramungul, N. (author) / Chow, T. P. (author) / Ghezzo, M. (author)
MATERIALS SCIENCE FORUM ; 264/268 ; 1013-1016
1998-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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