Comparison between Aluminium and Boron-Doped Junction Termination Extensions for High Voltage 6H-SiC Planar Bipolar Diodes: Fid-Bau Portal

Comparison between Aluminium and Boron-Doped Junction Termination Extensions for High Voltage 6H-SiC Planar Bipolar Diodes

Ortolland, S. / Locatelli, M. L. / Planson, D. / Chante, J. P. / Senes, A.

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Comparison between Aluminium and Boron-Doped Junction Termination Extensions for High Voltage 6H-SiC Planar Bipolar Diodes

Ortolland, S. / Locatelli, M. L. / Planson, D. / Chante, J. P. / Senes, A.

Comparison between Aluminium and Boron-Doped Junction Termination Extensions for High Voltage 6H-SiC Planar Bipolar Diodes

Ortolland, S. / Locatelli, M. L. / Planson, D. / Chante, J. P. / Senes, A.

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Title:

Comparison between Aluminium and Boron-Doped Junction Termination Extensions for High Voltage 6H-SiC Planar Bipolar Diodes

Contributors:

Ortolland, S. (author) / Locatelli, M. L. (author) / Planson, D. (author) / Chante, J. P. (author) / Senes, A. (author)

Published in:

MATERIALS SCIENCE FORUM ; 264/268 ; 1045-1048

Publication date:

1998-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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