Nitrogen passivation by implantation-induced point defects in 4H-SiC epitaxial layers

Aberg, D. / Hallen, A. / Pellegrino, P. et al. | British Library Online Contents | 2001

The influence of substrate temperature on the evolution of ion implantation-induced defects in epitaxial 6H-SiC

Anwand, W. / Brauer, G. / Wirth, H. et al. | British Library Online Contents | 2002

Slow Positron Beam Investigations of Defects Caused by B^+ Implantation into Epitaxial 6H-SiC

Anwand, W. / Brauer, G. / Kuriplach, J. et al. | British Library Online Contents | 2004

Boron diffusion in presence of defects induced by helium implantation

Cayrel, F. / Alquier, D. / Dubois, C. et al. | British Library Online Contents | 2005

Modification of silicon waveguide structures using ion implantation induced defects

Knights, A. P. / Dudeck, K. J. / Walters, W. D. et al. | British Library Online Contents | 2008