Electrical Characterization of Defects Introduced During Plasma-based Processing of GaAs: Fid-Bau Portal

Electrical Characterization of Defects Introduced During Plasma-based Processing of GaAs

Auret, F. D. / Goodman, S. A. / Myburg, G. / Meyer, W. E. / Deenapanray, P. N. K. / Murtagh, M. / Ye, S.-R. / Masterson, H. J. / Beechinor, J. T. / Crean, G. M.

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Electrical Characterization of Defects Introduced During Plasma-based Processing of GaAs

Auret, F. D. / Goodman, S. A. / Myburg, G. / Meyer, W. E. / Deenapanray, P. N. K. / Murtagh, M. / Ye, S.-R. / Masterson, H. J. / Beechinor, J. T. / Crean, G. M.

Electrical Characterization of Defects Introduced During Plasma-based Processing of GaAs

Auret, F. D. / Goodman, S. A. / Myburg, G. / Meyer, W. E. / Deenapanray, P. N. K. / Murtagh, M. / Ye, S.-R. / Masterson, H. J. / Beechinor, J. T. / Crean, G. M.

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Titel:

Electrical Characterization of Defects Introduced During Plasma-based Processing of GaAs

Beteiligte:

Auret, F. D. (Autor:in) / Goodman, S. A. (Autor:in) / Myburg, G. (Autor:in) / Meyer, W. E. (Autor:in) / Deenapanray, P. N. K. (Autor:in) / Murtagh, M. (Autor:in) / Ye, S.-R. (Autor:in) / Masterson, H. J. (Autor:in) / Beechinor, J. T. (Autor:in) / Crean, G. M. (Autor:in)

Erschienen in:

MATERIALS SCIENCE FORUM ; 258/263 ; 1045-1050

Erscheinungsdatum:

01.01.1997

Format / Umfang:

6 pages

ISSN:

0255-5476

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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Electrical and structural characterization of defects introduced in p-SiGe during low energy erbium implantation

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Electronic properties of defects introduced in GaAs during sputter deposition of gold Schottky contacts

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