Electrical and structural characterization of defects introduced in p-SiGe during low energy erbium implantation: Fid-Bau Portal

Electrical and structural characterization of defects introduced in p-SiGe during low energy erbium implantation

Mamor, M. / Pipeleers, B. / Auret, F. D. / Maes, J. / Hayne, M. / Moshchalkov, V. V. / Vantomme, A.

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Electrical and structural characterization of defects introduced in p-SiGe during low energy erbium implantation

Mamor, M. / Pipeleers, B. / Auret, F. D. / Maes, J. / Hayne, M. / Moshchalkov, V. V. / Vantomme, A.

Electrical and structural characterization of defects introduced in p-SiGe during low energy erbium implantation

Mamor, M. / Pipeleers, B. / Auret, F. D. / Maes, J. / Hayne, M. / Moshchalkov, V. V. / Vantomme, A.

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Titel:

Electrical and structural characterization of defects introduced in p-SiGe during low energy erbium implantation

Beteiligte:

Mamor, M. (Autor:in) / Pipeleers, B. (Autor:in) / Auret, F. D. (Autor:in) / Maes, J. (Autor:in) / Hayne, M. (Autor:in) / Moshchalkov, V. V. (Autor:in) / Vantomme, A. (Autor:in)

Erschienen in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 105 ; 179-183

Erscheinungsdatum:

01.01.2003

Format / Umfang:

5 pages

ISSN:

0921-5107

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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