Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
The role of defect excesses in damage formation in Si during ion implantation at elevated temperature
The role of defect excesses in damage formation in Si during ion implantation at elevated temperature
The role of defect excesses in damage formation in Si during ion implantation at elevated temperature
Holland, O. W. (Autor:in) / Budai, J. D. (Autor:in) / Nielsen, B. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- A ; 253 ; 240-248
01.01.1998
9 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Protecting Against Snowfall Excesses
Online Contents | 1998
Influence of Implantation Temperature and Dose Rate on Secondary Defect Formation in 4H-SiC
| British Library Online Contents | 2002
Formation of Anomalous Defect Structure on GaSb Surface by Low Temperature Sn Ion-Implantation
| British Library Online Contents | 2002
Multiaxial creep and damage under elevated temperature
| British Library Conference Proceedings | 2005
Infrared Investigation of Implantation Damage and Implantation Damage Annealing in 4H-SiC
| British Library Online Contents | 2001