Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Influence of Implantation Temperature and Dose Rate on Secondary Defect Formation in 4H-SiC
Influence of Implantation Temperature and Dose Rate on Secondary Defect Formation in 4H-SiC
Influence of Implantation Temperature and Dose Rate on Secondary Defect Formation in 4H-SiC
Ohno, T. (Autor:in) / Amemiya, K. (Autor:in)
MATERIALS SCIENCE FORUM ; 389/393 ; 823-826
01.01.2002
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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