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The role of defect excesses in damage formation in Si during ion implantation at elevated temperature
The role of defect excesses in damage formation in Si during ion implantation at elevated temperature
The role of defect excesses in damage formation in Si during ion implantation at elevated temperature
Holland, O. W. (author) / Budai, J. D. (author) / Nielsen, B. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- A ; 253 ; 240-248
1998-01-01
9 pages
Article (Journal)
English
DDC:
620.11
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