Ultra-shallow junction formation by spike annealing in a lamp-based or hot-walled rapid thermal annealing system: effect of ramp-up rate: Fid-Bau Portal

Ultra-shallow junction formation by spike annealing in a lamp-based or hot-walled rapid thermal annealing system: effect of ramp-up rate

Agarwal, A. / Fiory, A. T. / Gossmann, H.-J. L. / Rafferty, C. S. / Frisella, P.

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Ultra-shallow junction formation by spike annealing in a lamp-based or hot-walled rapid thermal annealing system: effect of ramp-up rate

Agarwal, A. / Fiory, A. T. / Gossmann, H.-J. L. / Rafferty, C. S. / Frisella, P.

Ultra-shallow junction formation by spike annealing in a lamp-based or hot-walled rapid thermal annealing system: effect of ramp-up rate

Agarwal, A. / Fiory, A. T. / Gossmann, H.-J. L. / Rafferty, C. S. / Frisella, P.

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Bestellung bei Subito €

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Titel:

Ultra-shallow junction formation by spike annealing in a lamp-based or hot-walled rapid thermal annealing system: effect of ramp-up rate

Beteiligte:

Agarwal, A. ( Autor:in ) / Fiory, A. T. ( Autor:in ) / Gossmann, H.-J. L. ( Autor:in ) / Rafferty, C. S. ( Autor:in ) / Frisella, P. ( Autor:in ) / Slaoui, A. / Singh, R. K. / Theiler, T. / Muller, J. C.

Erschienen in:

Papers presented at the European Materials Research Society 1998 Meeting. Symposium I: Rapid Thermal Processing ; 237-242

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 1

Erscheinungsdatum:

01.01.1998

Format / Umfang:

6 pages

ISSN:

1369-8001

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 621.38152

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