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Surface dopant concentration measurement using the Surface Charge Profiler (SCP) method: characterization of hydrogen and metallic contamination in silicon
Surface dopant concentration measurement using the Surface Charge Profiler (SCP) method: characterization of hydrogen and metallic contamination in silicon
Surface dopant concentration measurement using the Surface Charge Profiler (SCP) method: characterization of hydrogen and metallic contamination in silicon
Danel, A. (Autor:in) / Tardif, F. (Autor:in) / Kamarinos, G. (Autor:in) / Weber, J. / Mesli, A.
01.01.1999
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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