Inductively coupled plasma - plasma enhanced chemical vapor deposition silicon nitride for passivation of InP based high electron mobility transistors (HEMTs)

Medjdoub, M. / Courant, J. L. / Maher, H. et al. | British Library Online Contents | 2001

The structure and optical properties of silicon nanowires prepared by inductively coupled plasma chemical vapor deposition

Qin, Y. / Li, F. / Liu, D. et al. | British Library Online Contents | 2011

The optical properties of silicon-rich silicon nitride prepared by plasma-enhanced chemical vapor deposition

Yoshinaga, Seiya / Ishikawa, Yasuaki / Kawamura, Yusuke et al. | British Library Online Contents | 2019

Effect of Plasma Enhanced Chemical Vapor Deposition Parameters on Characteristics of Silicon nitride Film

Li, X.-b. / Zhang, F.-h. | British Library Online Contents | 2006

Reduced bias synthesis of cubic boron nitride thin films by magnetically enhanced inductively coupled radio frequency plasma chemical vapor deposition

Chattopadhyay, K. K. / Banerjee, A. N. / Kundoo, S. | British Library Online Contents | 2003