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Effect of inert gas additive species on Cl"2 high density plasma etching of compound semiconductors - Part II. InP, InSb, InGaP and InGaAs
Effect of inert gas additive species on Cl"2 high density plasma etching of compound semiconductors - Part II. InP, InSb, InGaP and InGaAs
Effect of inert gas additive species on Cl"2 high density plasma etching of compound semiconductors - Part II. InP, InSb, InGaP and InGaAs
Hahn, Y.B. (Autor:in) / Hays, D.C. (Autor:in) / Cho, H. (Autor:in) / Jung, K.B. (Autor:in) / Abernathy, C.R. (Autor:in) / Pearton, S.J. (Autor:in) / Shul, R.J. (Autor:in)
APPLIED SURFACE SCIENCE ; 147 ; 215-221
01.01.1999
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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British Library Online Contents | 1999
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|High selectivity Inductively Coupled Plasma etching of GaAs over InGaP
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