Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Selective dry etching using inductively coupled plasmas - Part I. GaAs/AlGaAs and GaAs/InGaP
Selective dry etching using inductively coupled plasmas - Part I. GaAs/AlGaAs and GaAs/InGaP
Selective dry etching using inductively coupled plasmas - Part I. GaAs/AlGaAs and GaAs/InGaP
Hays, D.C. (Autor:in) / Cho, H. (Autor:in) / Jung, K.B. (Autor:in) / Hahn, Y.B. (Autor:in) / Abernathy, C.R. (Autor:in) / Pearton, S.J. (Autor:in) / Ren, F. (Autor:in) / Hobson, W.S. (Autor:in)
APPLIED SURFACE SCIENCE ; 147 ; 125-133
01.01.1999
9 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
High selectivity Inductively Coupled Plasma etching of GaAs over InGaP
British Library Online Contents | 2000
|Selective dry etching using inductively coupled plasmas - Part II. InN/GaN and InN/AlN
British Library Online Contents | 1999
|Photoluminescence characterization of InGaP/GaAs/InGaP quantum wires
British Library Online Contents | 2001
|Kinetics of etching in inductively coupled plasmas
British Library Online Contents | 2004
|British Library Online Contents | 1999
|