Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Epitaxial growth of 4H-SiC by sublimation close space technique
Epitaxial growth of 4H-SiC by sublimation close space technique
Epitaxial growth of 4H-SiC by sublimation close space technique
Nishino, S. (Autor:in) / Matsumoto, K. (Autor:in) / Yoshida, T. (Autor:in) / Chen, Y. (Autor:in) / Lilov, S.K. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 61-62 ; 121 - 124
01.01.1999
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Crystal Growth of Aluminum Nitride by Sublimation Close Space Technique
British Library Online Contents | 2002
|Micropipe Filling by the Sublimation Close Space Technique
British Library Online Contents | 2001
|Homoepitaxial Growth on 4H-SiC (0338) Face by Sublimation Close Space Technique
British Library Online Contents | 2005
|AIN Crystal Growth by Sublimation Technique
British Library Online Contents | 2001
|British Library Online Contents | 2009
|