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Homoepitaxial Growth on 4H-SiC (0338) Face by Sublimation Close Space Technique
Homoepitaxial Growth on 4H-SiC (0338) Face by Sublimation Close Space Technique
Homoepitaxial Growth on 4H-SiC (0338) Face by Sublimation Close Space Technique
Yoneda, S. (Autor:in) / Furusho, T. (Autor:in) / Takagi, H. (Autor:in) / Ohta, S. (Autor:in) / Nishino, S. (Autor:in) / Nipoti, R. / Poggi, A. / Scorzoni, A.
01.01.2005
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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