Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Surface Morphology of AlN Epitaxial Layer Grown on Various SiC Substrates by Sublimation Closed Space Technique
Surface Morphology of AlN Epitaxial Layer Grown on Various SiC Substrates by Sublimation Closed Space Technique
Surface Morphology of AlN Epitaxial Layer Grown on Various SiC Substrates by Sublimation Closed Space Technique
Lee, G.S. (Autor:in) / Kyun, M.O. (Autor:in) / Hwang, H.H. (Autor:in) / An, J.H. (Autor:in) / Lee, W.J. (Autor:in) / Shin, B.C. (Autor:in) / Nishino, S. (Autor:in)
MATERIALS SCIENCE FORUM ; 600/603 ; 1285-1288
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Epitaxial growth of 4H-SiC by sublimation close space technique
British Library Online Contents | 1999
|Mechanism of Various Defects Formation in Epitaxial Layer Prepared by Sublimation Epitaxy
British Library Online Contents | 2000
|Domain misorientation in sublimation grown 4H SiC epitaxial layers
British Library Online Contents | 1999
|Domain Occurrence in SiC Epitaxial Layers Grown by Sublimation
British Library Online Contents | 1998
|Breakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping Substrates
British Library Online Contents | 2003
|