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Epitaxial growth of 4H-SiC by sublimation close space technique

Nishino, S. / Matsumoto, K. / Yoshida, T. / Chen, Y. / Lilov, S.K.

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Epitaxial growth of 4H-SiC by sublimation close space technique

Nishino, S. / Matsumoto, K. / Yoshida, T. / Chen, Y. / Lilov, S.K.

Epitaxial growth of 4H-SiC by sublimation close space technique

Nishino, S. / Matsumoto, K. / Yoshida, T. / Chen, Y. / Lilov, S.K.

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Order at Subito €

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Document information

Title:

Epitaxial growth of 4H-SiC by sublimation close space technique

Contributors:

Nishino, S. (author) / Matsumoto, K. (author) / Yoshida, T. (author) / Chen, Y. (author) / Lilov, S.K. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 61-62 ; 121 - 124

Publication date:

1999-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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