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Progress in the use of 4H-SiC semi-insulating wafers for microwave power MESFETs
Progress in the use of 4H-SiC semi-insulating wafers for microwave power MESFETs
Progress in the use of 4H-SiC semi-insulating wafers for microwave power MESFETs
Noblanc, O. (Autor:in) / Arnodo, C. (Autor:in) / Dua, C. (Autor:in) / Chartier, E. (Autor:in) / Brylinski, C. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 61-62 ; 339 - 344
01.01.1999
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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