Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Measurements and analysis of surface potential change during wear of single-crystal silicon (100) at ultralow loads using Kelvin probe microscopy
Measurements and analysis of surface potential change during wear of single-crystal silicon (100) at ultralow loads using Kelvin probe microscopy
Measurements and analysis of surface potential change during wear of single-crystal silicon (100) at ultralow loads using Kelvin probe microscopy
Bhushan, B. (Autor:in) / Goldade, A. V. (Autor:in)
APPLIED SURFACE SCIENCE ; 157 ; 373-381
01.01.2000
9 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Kelvin probe microscopy measurements of surface potential change under wear at low loads
British Library Online Contents | 2000
|Measurements of electric potential in a laser diode by Kelvin Probe Force Microscopy
British Library Online Contents | 2000
|Material removal mechanisms of single-crystal silicon on nanoscale and at ultralow loads
British Library Online Contents | 1998
|British Library Online Contents | 2011
|Scanning Kelvin probe and surface photovoltage analysis of multicrystalline silicon
British Library Online Contents | 2002
|