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Effect of Post-Oxidation-Annealing in Hydrogen on SiO~2/4H-SiC Interface
Effect of Post-Oxidation-Annealing in Hydrogen on SiO~2/4H-SiC Interface
Effect of Post-Oxidation-Annealing in Hydrogen on SiO~2/4H-SiC Interface
Suzuki, S. (Autor:in) / Fukuda, K. (Autor:in) / Okushi, H. (Autor:in) / Nagai, K. (Autor:in) / Sekigawa, T. (Autor:in) / Yoshida, S. (Autor:in) / Tanaka, T. (Autor:in) / Arai, K. (Autor:in)
MATERIALS SCIENCE FORUM ; 338/342 ; 1073-1076
01.01.2000
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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