Effect of Post-Oxidation-Annealing in Hydrogen on SiO~2/4H-SiC Interface: Fid-Bau Portal

Effect of Post-Oxidation-Annealing in Hydrogen on SiO~2/4H-SiC Interface

Suzuki, S. / Fukuda, K. / Okushi, H. / Nagai, K. / Sekigawa, T. / Yoshida, S. / Tanaka, T. / Arai, K.

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Effect of Post-Oxidation-Annealing in Hydrogen on SiO~2/4H-SiC Interface

Suzuki, S. / Fukuda, K. / Okushi, H. / Nagai, K. / Sekigawa, T. / Yoshida, S. / Tanaka, T. / Arai, K.

Effect of Post-Oxidation-Annealing in Hydrogen on SiO~2/4H-SiC Interface

Suzuki, S. / Fukuda, K. / Okushi, H. / Nagai, K. / Sekigawa, T. / Yoshida, S. / Tanaka, T. / Arai, K.

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Document information

Title:

Effect of Post-Oxidation-Annealing in Hydrogen on SiO~2/4H-SiC Interface

Contributors:

Suzuki, S. (author) / Fukuda, K. (author) / Okushi, H. (author) / Nagai, K. (author) / Sekigawa, T. (author) / Yoshida, S. (author) / Tanaka, T. (author) / Arai, K. (author)

Published in:

MATERIALS SCIENCE FORUM ; 338/342 ; 1073-1076

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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