Schottky Barrier Characteristics of 3C-SiC Epilayers Grown by Low Pressure Chemical Vapor Deposition

Ishida, Y. / Takahashi, T. / Okumura, H. et al. | British Library Online Contents | 2000

High temperature ohmic contacts to 3C-SiC grown on Si substrates by chemical vapor deposition

Constantinidis, G. / Kornilios, N. / Zekentes, K. et al. | British Library Online Contents | 1997

Electrical characterization of defects introduced during electron beam deposition of Schottky contacts on n-type Ge

Auret, F. D. / Meyer, W. E. / Coelho, S. et al. | British Library Online Contents | 2006

Characterization of Ge-Doped Homoepitaxial Layers Grown by Chemical Vapor Deposition

Sledziewski, T. / Beljakowa, S. / Alassaad, K. et al. | British Library Online Contents | 2014

Scanning tunneling microscopy characterization of metalorganic chemical vapor deposition grown GaN

Horn, J. / Pavlidis, D. / Park, Y. et al. | British Library Online Contents | 1997