A platform for research: civil engineering, architecture and urbanism
Characterization of Au Schottky Contacts on p-Type 3C-SiC Grown by Low Pressure Chemical Vapor Deposition
Characterization of Au Schottky Contacts on p-Type 3C-SiC Grown by Low Pressure Chemical Vapor Deposition
Characterization of Au Schottky Contacts on p-Type 3C-SiC Grown by Low Pressure Chemical Vapor Deposition
Kojima, K. (author) / Yoshikawa, M. (author) / Ohshima, T. (author) / Itoh, H. (author) / Okada, S. (author)
MATERIALS SCIENCE FORUM ; 338/342 ; 1239-1242
2000-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Schottky Barrier Characteristics of 3C-SiC Epilayers Grown by Low Pressure Chemical Vapor Deposition
British Library Online Contents | 2000
|High temperature ohmic contacts to 3C-SiC grown on Si substrates by chemical vapor deposition
British Library Online Contents | 1997
|British Library Online Contents | 2006
|Characterization of Ge-Doped Homoepitaxial Layers Grown by Chemical Vapor Deposition
British Library Online Contents | 2014
|Scanning tunneling microscopy characterization of metalorganic chemical vapor deposition grown GaN
British Library Online Contents | 1997
|