Thermal stability of InN epilayers grown by high pressure chemical vapor deposition

Acharya, A. R. / Gamage, S. / Senevirathna, M. K. et al. | British Library Online Contents | 2013

3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics

Ishida, Y. / Kushibe, M. / Takahashi, T. et al. | British Library Online Contents | 2002

Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition

Ji, S.Y. / Kojima, K. / Ishida, Y. et al. | British Library Online Contents | 2013

Characterization of Au Schottky Contacts on p-Type 3C-SiC Grown by Low Pressure Chemical Vapor Deposition

Kojima, K. / Yoshikawa, M. / Ohshima, T. et al. | British Library Online Contents | 2000

Surface morphology and optical properties of ZnO epilayers grown on Si(111) by metal organic chemical vapor deposition

Hung, S. C. / Huang, P. J. / Chan, C. E. et al. | British Library Online Contents | 2009