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Effect of Boron Implantation on 6H-SiC N-MOSFET Interface Properties
Effect of Boron Implantation on 6H-SiC N-MOSFET Interface Properties
Effect of Boron Implantation on 6H-SiC N-MOSFET Interface Properties
Godignon, P. (Autor:in) / Jorda, X. (Autor:in) / Vellvehi, M. (Autor:in) / Berberich, S. (Autor:in) / Montserrat, J. (Autor:in) / Ottaviani, L. (Autor:in)
MATERIALS SCIENCE FORUM ; 338/342 ; 1303-1306
01.01.2000
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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