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2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development
2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development
2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development
Agarwal, A. (Autor:in) / Ryu, S.-H. (Autor:in) / Singh, R. (Autor:in) / Kordina, O. (Autor:in) / Palmour, J. W. (Autor:in)
MATERIALS SCIENCE FORUM ; 338/342 ; 1387-1390
01.01.2000
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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