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High quality GaN layers grown by hydride vapor phase epitaxy - a high resolution X-ray diffractometry and synchrotron X-ray topography study
High quality GaN layers grown by hydride vapor phase epitaxy - a high resolution X-ray diffractometry and synchrotron X-ray topography study
High quality GaN layers grown by hydride vapor phase epitaxy - a high resolution X-ray diffractometry and synchrotron X-ray topography study
Chaudhuri, J. (author) / Ignatiev, C. (author) / Stepanov, S. (author) / Tsvetkov, D. (author) / Cherenkov, A. (author) / Dmitriev, V. (author) / Rek, Z. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 78 ; 22 - 27
2000-01-01
6 pages
Article (Journal)
English
DDC:
620.11
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