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High quality GaN layers grown by hydride vapor phase epitaxy - a high resolution X-ray diffractometry and synchrotron X-ray topography study

Chaudhuri, J. / Ignatiev, C. / Stepanov, S. / Tsvetkov, D. / Cherenkov, A. / Dmitriev, V. / Rek, Z.

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High quality GaN layers grown by hydride vapor phase epitaxy - a high resolution X-ray diffractometry and synchrotron X-ray topography study

Chaudhuri, J. / Ignatiev, C. / Stepanov, S. / Tsvetkov, D. / Cherenkov, A. / Dmitriev, V. / Rek, Z.

High quality GaN layers grown by hydride vapor phase epitaxy - a high resolution X-ray diffractometry and synchrotron X-ray topography study

Chaudhuri, J. / Ignatiev, C. / Stepanov, S. / Tsvetkov, D. / Cherenkov, A. / Dmitriev, V. / Rek, Z.

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Order at Subito €

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Title:

High quality GaN layers grown by hydride vapor phase epitaxy - a high resolution X-ray diffractometry and synchrotron X-ray topography study

Contributors:

Chaudhuri, J. (author) / Ignatiev, C. (author) / Stepanov, S. (author) / Tsvetkov, D. (author) / Cherenkov, A. (author) / Dmitriev, V. (author) / Rek, Z. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 78 ; 22 - 27

Publication date:

2000-01-01

Size:

6 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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