Photoluminescence investigation of ferromagnetic Ga1-xMnxN layers with GaN templates grown on sapphire (0001) substrates

Yoon, I. T. / Ham, M. H. / Myoung, J. M. | British Library Online Contents | 2009

Sulphur-Passivated GaAs Investigation Using High Resolution X-Ray Diffractometry

Pavlov, K. / Jamieson, I. / Jakovidis, G. et al. | British Library Online Contents | 2003

Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates

Feng, Z. C. / Yang, T. R. / Hou, Y. T. | British Library Online Contents | 2001

Recent advances in high-resolution X-ray diffractometry applied to nanostructured oxide thin films: The case of yttria stabilized zirconia epitaxially grown on sapphire

Boulle, A. / Guinebretiere, R. / Masson, O. et al. | British Library Online Contents | 2006

High quality GaN layers grown by hydride vapor phase epitaxy - a high resolution X-ray diffractometry and synchrotron X-ray topography study

Chaudhuri, J. / Ignatiev, C. / Stepanov, S. et al. | British Library Online Contents | 2000