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Defect Analysis of SiC Sublimation Growth by the in-situ X-Ray Topography
Defect Analysis of SiC Sublimation Growth by the in-situ X-Ray Topography
Defect Analysis of SiC Sublimation Growth by the in-situ X-Ray Topography
Kato, T. (Autor:in) / Oyanagi, N. (Autor:in) / Yamaguchi, H. (Autor:in) / Nishizawa, S. i. (Autor:in) / Arai, K. (Autor:in)
MATERIALS SCIENCE FORUM ; 353/356 ; 295-298
01.01.2001
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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