Defect Analysis of SiC Sublimation Growth by the in-situ X-Ray Topography: Fid-Bau Portal

Defect Analysis of SiC Sublimation Growth by the in-situ X-Ray Topography

Kato, T. / Oyanagi, N. / Yamaguchi, H. / Nishizawa, S. i. / Arai, K.

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Defect Analysis of SiC Sublimation Growth by the in-situ X-Ray Topography

Kato, T. / Oyanagi, N. / Yamaguchi, H. / Nishizawa, S. i. / Arai, K.

Defect Analysis of SiC Sublimation Growth by the in-situ X-Ray Topography

Kato, T. / Oyanagi, N. / Yamaguchi, H. / Nishizawa, S. i. / Arai, K.

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Document information

Title:

Defect Analysis of SiC Sublimation Growth by the in-situ X-Ray Topography

Contributors:

Kato, T. (author) / Oyanagi, N. (author) / Yamaguchi, H. (author) / Nishizawa, S. i. (author) / Arai, K. (author)

Published in:

MATERIALS SCIENCE FORUM ; 353/356 ; 295-298

Publication date:

2001-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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