Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Sublimation Growth of SiC Crystal Using Modified Crucible Design on 4H-SiC {0338} Substrate and Defect Analysis
Sublimation Growth of SiC Crystal Using Modified Crucible Design on 4H-SiC {0338} Substrate and Defect Analysis
Sublimation Growth of SiC Crystal Using Modified Crucible Design on 4H-SiC {0338} Substrate and Defect Analysis
Furusho, T. (Autor:in) / Takagi, H. (Autor:in) / Ota, S. (Autor:in) / Shiomi, H. (Autor:in) / Nishino, S. (Autor:in)
MATERIALS SCIENCE FORUM ; 457/460 ; 107-110
01.01.2004
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Homoepitaxial Growth on 4H-SiC (0338) Face by Sublimation Close Space Technique
British Library Online Contents | 2005
|SiC Crystal Growth by Sublimation Method with Modification of Crucible and Insulation Felt Design
British Library Online Contents | 2005
|Epitaxial growth of 4H-SiC(0338) and control of MOS interface
British Library Online Contents | 2003
|