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Modeling of the effects of crystallographic orientation on electromigration-limited reliability of interconnects with bamboo grain structures
Modeling of the effects of crystallographic orientation on electromigration-limited reliability of interconnects with bamboo grain structures
Modeling of the effects of crystallographic orientation on electromigration-limited reliability of interconnects with bamboo grain structures
Fayad, W. R. (Autor:in) / Andleigh, V. K. (Autor:in) / Thompson, C. V. (Autor:in)
JOURNAL OF MATERIALS RESEARCH -PITTSBURGH- ; 16 ; 413-416
01.01.2001
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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