Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Effects of Ti and TiN underlayers on electromigration reliability of Al-Cu interconnects
Effects of Ti and TiN underlayers on electromigration reliability of Al-Cu interconnects
Effects of Ti and TiN underlayers on electromigration reliability of Al-Cu interconnects
Park, Y. B. (Autor:in) / Lee, D. W. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 87 ; 70 - 76
01.01.2001
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Electromigration and IC Interconnects
British Library Online Contents | 1993
|Electromigration in ULSI interconnects
British Library Online Contents | 2007
|Effect of low k dielectrics on electromigration reliability for Cu interconnects
British Library Online Contents | 2004
|Grain structure effect on electromigration reliability of Cu interconnects with CoWP capping
British Library Online Contents | 2011
|British Library Online Contents | 2004
|