High-resolution DLTS studies of vacancy-related defects in irradiated and in ion-implanted n-type silicon

Evans-Freeman, J. H. / Peaker, A. R. / Hawkins, I. D. et al. | British Library Online Contents | 2000

High Resolution DLTS Studies of Transition-Metal-Related Defects in Silicon

Dobaczewski, L. / Kaminski, P. / Kozlowski, R. et al. | British Library Online Contents | 1995

DLTS analysis of nickel-hydrogen complex defects in silicon

Shiraishi, M. / Sachse, J.-U. / Lemke, H. et al. | British Library Online Contents | 1999

Photoluminescence and DLTS Measurements of 15 MeV Erbium Implanted 6H and 4H SiC

Shishkin, Y. / Choyke, W. J. / Devaty, R. P. et al. | British Library Online Contents | 2000

Structural defects and dislocation-related photoluminescence in erbium-implanted silicon

Sobolev, N. A. / Emel'yanov, A. M. / Shek, E. I. et al. | British Library Online Contents | 2002