Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Structure of In-Grown Stacking Faults in the 4H-SiC Epitaxial Layers
Structure of In-Grown Stacking Faults in the 4H-SiC Epitaxial Layers
Structure of In-Grown Stacking Faults in the 4H-SiC Epitaxial Layers
Izumi, S. (Autor:in) / Tsuchida, H. (Autor:in) / Tawara, T. (Autor:in) / Kamata, I. (Autor:in) / Izumi, K. (Autor:in) / Nipoti, R. / Poggi, A. / Scorzoni, A.
01.01.2005
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers
| British Library Online Contents | 2011
PL Imaging Study of In-Grown Stacking Faults in 4H-SiC Epitaxial Layer
| British Library Online Contents | 2009
SEM Visibility of Stacking Faults in 4H-Silicon Carbide Epitaxial and Implanted Layers
| British Library Online Contents | 2003
HREM study of basal stacking faults in GaN layers grown over sapphire substrate
| British Library Online Contents | 2001
| British Library Online Contents | 2009