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The origins of the DX center formation in unintentionally doped GaN epilayers grown on sapphire substrates
The origins of the DX center formation in unintentionally doped GaN epilayers grown on sapphire substrates
The origins of the DX center formation in unintentionally doped GaN epilayers grown on sapphire substrates
Kang, T. W. (Autor:in) / Park, C. S. (Autor:in) / Kim, T. W. (Autor:in)
APPLIED SURFACE SCIENCE ; 180 ; 81-86
01.01.2001
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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