Growth of vertically oriented InN nanorods from In-rich conditions on unintentionally patterned sapphire substrates

Terziyska, Penka T. / Butcher, Kenneth Scott A. / Rafailov, Peter et al. | British Library Online Contents | 2015

The origins of the DX center formation in unintentionally doped GaN epilayers grown on sapphire substrates

Kang, T. W. / Park, C. S. / Kim, T. W. | British Library Online Contents | 2001

Optical quenching behavior related to the deep levels in unintentionally doped n-type GaN epilayers grown on sapphire substrates

Kim, N. H. / Kang, T. W. / Kim, T. W. | British Library Online Contents | 2004

Growth of nonpolar a-plane GaN on nano-patterned r-plane sapphire substrates

Gao, H. / Yan, F. / Zhang, Y. et al. | British Library Online Contents | 2009

Evaluation of Unintentionally Doped Impurities in Silicon Carbide Substrates Using Neutron Activation Analysis

Ohshima, T. / Tokunaga, O. / Issiki, M. et al. | British Library Online Contents | 2007