The origins of the DX center formation in unintentionally doped GaN epilayers grown on sapphire substrates

Kang, T. W. / Park, C. S. / Kim, T. W. | British Library Online Contents | 2001

Precipitates in GaN epilayers grown on sapphire substrates

Kang, J. / Ogawa, T. | British Library Online Contents | 1998

Effect of annealing on neutron-transmutation-doped GaN epilayers grown on sapphire substrates

Park, S. H. / Kang, T. W. / Kim, T. W. | British Library Online Contents | 2004

Deep levels in Ti-doped GaAs epilayers grown on undoped GaAs (100) substrates

Wui, Y.H. / Kang, T.W. / Kim, T.W. | British Library Online Contents | 1999

Characterization of GaN Epilayers Grown on Sapphire and SiC Substrates

Wieser, N. / Klose, M. / Scholz, F. et al. | British Library Online Contents | 1998