Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
The dependence of the interband exciton transitions on the annealing temperature and time in In0.53Ga0.47As/InP multiple quantum wells with a SiNx capping layer
The dependence of the interband exciton transitions on the annealing temperature and time in In0.53Ga0.47As/InP multiple quantum wells with a SiNx capping layer
The dependence of the interband exciton transitions on the annealing temperature and time in In0.53Ga0.47As/InP multiple quantum wells with a SiNx capping layer
Lee, M. K. (Autor:in) / Song, J. D. (Autor:in) / Yu, J. S. (Autor:in) / Lee, Y. T. (Autor:in) / Kim, T. W. (Autor:in)
MATERIALS RESEARCH BULLETIN ; 36 ; 2027-2033
01.01.2001
7 pages
Aufsatz (Zeitschrift)
Englisch
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