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Damage profiles and damage annealing behavior in Al0.168Ga0.348In0.484P/GaAs implanted with 200 keV Zn+ ions
Damage profiles and damage annealing behavior in Al0.168Ga0.348In0.484P/GaAs implanted with 200 keV Zn+ ions
Damage profiles and damage annealing behavior in Al0.168Ga0.348In0.484P/GaAs implanted with 200 keV Zn+ ions
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 86 ; 189 - 194
01.01.2001
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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