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    Effects of Ti and TiN underlayers on electromigration reliability of Al-Cu interconnects

    New search for: Park, Y. B.
    New search for: Lee, D. W.

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    Effects of Ti and TiN underlayers on electromigration reliability of Al-Cu interconnects

    New search for: Park, Y. B.
    New search for: Lee, D. W.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Effects of Ti and TiN underlayers on electromigration reliability of Al-Cu interconnects

    New search for: Park, Y. B.
    New search for: Lee, D. W.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Similar titles

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    Document information
    Title:

    Effects of Ti and TiN underlayers on electromigration reliability of Al-Cu interconnects

    Contributors:

    Park, Y. B. (author) / Lee, D. W. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 87 ; 70 - 76

    Publication date:

    2001-01-01

    Size:

    7 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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