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Sensitivity of p-n junction based on SiC doped with deep impurity acceptor levels
Sensitivity of p-n junction based on SiC doped with deep impurity acceptor levels
Sensitivity of p-n junction based on SiC doped with deep impurity acceptor levels
Buniatyan, V. V. (Autor:in) / Gasparyan, F. V. (Autor:in) / Aroutiounian, V. V. (Autor:in) / Soukiassian, P. (Autor:in)
APPLIED SURFACE SCIENCE ; 184 ; 466-470
01.01.2001
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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