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Bandgap narrowing in strained SiGe on the basis of electrical measurements on Si/SiGe/Si hetero bipolar transistors
Bandgap narrowing in strained SiGe on the basis of electrical measurements on Si/SiGe/Si hetero bipolar transistors
Bandgap narrowing in strained SiGe on the basis of electrical measurements on Si/SiGe/Si hetero bipolar transistors
Eberhardt, J. (Autor:in) / Kasper, E. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 89 ; 93 - 96
01.01.2002
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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