Single crystal growth of compositionally graded InXGa1-XAs

Kato, H. T. / Iwai, M. / Muramatsu, Y. et al. | British Library Online Contents | 2000

Optimization of InxGa1-xP/In0.2Ga0.8As/GaAs high electron mobility transistor structures grown by solid source molecular beam epitaxy

Zheng, H. Q. / Yoon, S. F. / Gay, B. P. et al. | British Library Online Contents | 2000

Novel In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistors on GaAs substrate with InxGa1-xP graded buffer layers

Yuan, K. / Radhakrishnan, K. / Zheng, H. Q. et al. | British Library Online Contents | 2001

Influence of buffer layers on the structural properties of molecular beam epitaxy grown GaN layers

Kirchner, V. / Ebel, R. / Heinke, H. et al. | British Library Online Contents | 1999

SIMS and SEM analysis of In1-x-yAlxGayP LED structure grown on InxGa1-xP graded buffer

Vincze, A. / Satka, A. / Peternai, L. et al. | British Library Online Contents | 2006