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Low-Temperature Activation of Ion-Implanted Dopants in 4H-SiC by Excimer Laser Annealing
Low-Temperature Activation of Ion-Implanted Dopants in 4H-SiC by Excimer Laser Annealing
Low-Temperature Activation of Ion-Implanted Dopants in 4H-SiC by Excimer Laser Annealing
Tanaka, Y. (Autor:in) / Tanoue, H. (Autor:in) / Arai, K. (Autor:in)
MATERIALS SCIENCE FORUM ; 389/393 ; 799-802
01.01.2002
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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