Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers
Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers
Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers
Zimmermann, U. (Autor:in) / Osterman, J. (Autor:in) / Zhang, J. (Autor:in) / Henry, A. (Autor:in) / Hallen, A. (Autor:in)
MATERIALS SCIENCE FORUM ; 389/393 ; 1285-1288
01.01.2002
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2001
|Contactless Electrical Defect Characterization and Topography of a-Plane Grown Epitaxial Layers
British Library Online Contents | 2007
|Electrical properties of molecular beam epitaxial GaAs layers grown at low temperature
British Library Online Contents | 1994
|SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties
British Library Online Contents | 2007
|British Library Online Contents | 2004
|